C-V and G-V Studies Formed by Low Energy Dual Ion Implantation
Author : AP Patel
Abstract :
Silicon oxynitride (SixOyNz) thin insulating films were synthesized by sequential implantation of reactive ion-beams of 16O2+ and 14N2+ in the ratio 1:1 into silicon at room temperature to total fluence level of 1.0×1018 cm-2 at 30 keV energy. The high frequency capacitance-voltage (C-V) and conductance-voltage (G-V) studies performed at room temperature on MIS devices fabricated with as implanted as well as rapid thermal annealed (RTA) samples reveal the presence of interface traps. The interface state density distribution showed U- shaped features with midgap value ~1.61-1.81×1010 eV-1 cm2 discrete peaks in the lower as well as higher energy range after annealing. The G-V studies show that there is less contribution from series and bulk states. The conductance is found to be increasing with increase in annealing temperature.
Keywords :
Silicon oxynitride, C-V, G-V, RTA
