Annealing Studies of Buried Oxide Layers Synthesized by SIMOX Process
Author : AP Patel
Abstract :
Silicon oxide (SiO) buried layers were synthesized by SIMOX process using 140 keV O+ ion implantation at low fluence levels ranging from 1.0×1016 to 7.0×1016 cm-2 into <111> single crystal silicon substrates at room temperature. The samples were study before and after annealing at temperature (1200 ºC for 30 min) in argon ambient. The FTIR spectra of the samples revealed absorption band associated with one bending vibration in addition to the asymmetric stretching vibration of Si-O bonds on annealing. The XRD studies revealed the formation of silicon oxide (SiO2) at all ion fluence.
Keywords :
Silicon oxide, FTIR, XRD.
